[A-7-5] High Drivability CMOSFETs with Asymmetrical Source-Drain (ASD) Structure for Low Supply Voltage ULSIs

A. Shimizu, T. Yamanaka, N. Hashimoto, T. Hashimoto, Y. Sakai, E. Takeda (1.Hitachi VLSI Engineering Corp., 2.Central Reseach Laboratory Hitachi Ltd., 3.Semiconductor Design & Development Center, Hitachi Ltd.)

https://doi.org/10.7567/SSDM.1989.A-7-5