[A-7-5] High Drivability CMOSFETs with Asymmetrical Source-Drain (ASD) Structure for Low Supply Voltage ULSIs

A. Shimizu、T. Yamanaka、N. Hashimoto、T. Hashimoto、Y. Sakai、E. Takeda (1.Hitachi VLSI Engineering Corp.、2.Central Reseach Laboratory Hitachi Ltd.、3.Semiconductor Design & Development Center, Hitachi Ltd.)

https://doi.org/10.7567/SSDM.1989.A-7-5