[C-4-1] Atomic Layer Epitaxial Growth of GaAs Using KrF Excimer Laser

Hironori ISHIKAWA, Yoshito KAWAKYU, Masahiro SASAKI, Masao MASHITA (1.R&D Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1989.C-4-1