[D-3-3] Effect of InGaAs Well Width on Low-Noise Performance in AlGaAs/InGaAs Pseudomorphic HEMT

Masaaki Itoh, Kazuhiko Ohmuro, Hiroshi Nakamura, Seiji Nishi, Seiichi Takahashi (1.Research Laboratory, Oki Electric Industry Co., Ltd)

https://doi.org/10.7567/SSDM.1989.D-3-3