[S-A-5] Poly-Si/GaAs Layered Structure on Si as a Wide Bandgap Emitter for Si Heterojunction Bipolar Transistor

K. Kikuta、T. Kikkawa、M. Kawanaka、J. Sone (1.NEC Corp. Microelectronics Research Laboratories)

https://doi.org/10.7567/SSDM.1989.S-A-5