[S-B-11] Reverse-Bias Current Reduction in Low-Temperature-Annealed pn Junctions Using a UHV Ion-Implanter

Y. Ishihara, A. Okita, K. Yoshikawa, T. Shibata, T. Ohmi, T. Nitta, J. Sugiura, N. Ohwada (1.Department of Electronics Faculty of Engineering Tohoku University, 2.Device Development Center, Hitachi Ltd.)

https://doi.org/10.7567/SSDM.1989.S-B-11