[S-B-11] Reverse-Bias Current Reduction in Low-Temperature-Annealed pn Junctions Using a UHV Ion-Implanter

Y. Ishihara、A. Okita、K. Yoshikawa、T. Shibata、T. Ohmi、T. Nitta、J. Sugiura、N. Ohwada (1.Department of Electronics Faculty of Engineering Tohoku University、2.Device Development Center, Hitachi Ltd.)

https://doi.org/10.7567/SSDM.1989.S-B-11