[S-D-3] New Evidence for Double Charged Oxide Trap of Submicron MOSFET's

Hiroshi NAKAMURA、Naoki YASUDA、Kenji TANIGUCHI、Chihiro HAMAGUCHI、Akira TORIUMI (1.Department of Electronics Engineering, Osaka University、2.ULSI Research Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1989.S-D-3