[S-D-3] New Evidence for Double Charged Oxide Trap of Submicron MOSFET's

Hiroshi NAKAMURA, Naoki YASUDA, Kenji TANIGUCHI, Chihiro HAMAGUCHI, Akira TORIUMI (1.Department of Electronics Engineering, Osaka University, 2.ULSI Research Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1989.S-D-3