[B-1-6] A New HEMT Structure with a Quantum Well Formed by Inserting Monolayers in the Channel

Kohji MATSUMURA、Daijiro INOUE、Haruo NAKANO、Minoru SAWADA、Yasoo HARADA、Takashi NAKAKADO (1.Semiconductor Research Center, SANYO Electric Co., Ltd.)

https://doi.org/10.7567/SSDM.1990.B-1-6