Extreme Low Power 1:4 Demultiplexer Using Double Delta Doped Quantum Well GaAs/AlGaAs Transistors

M. Berroth; U. Nowotny; V. Hurm; M. Lang; K. Kohler; U. Kaufel; A. Hulsmann; J. Schneider; T. Jakobus; Ch. Hoffmann; K. Bachem

doi:https://doi.org/10.7567/SSDM.1990.B-3-2

[B-3-2] Extreme Low Power 1:4 Demultiplexer Using Double Delta Doped Quantum Well GaAs/AlGaAs Transistors

M. Berroth, U. Nowotny, V. Hurm, M. Lang, K. Kohler, U. Kaufel, A. Hulsmann, J. Schneider, T. Jakobus, Ch. Hoffmann, K. Bachem (1.Fraunhofer Institut fur Angewandte Festkorperphysik)

https://doi.org/10.7567/SSDM.1990.B-3-2

1990 International Conference on Solid State Devices and Materials

[B-3-2] Extreme Low Power 1:4 Demultiplexer Using Double Delta Doped Quantum Well GaAs/AlGaAs Transistors