[B-3-6] Improvement of GaAs MESFET's Characteristics on SiO2-Back-Coated Si Substrate by MOCVD

Takashi Egawa、Shinji Nozaki、Tetsuo Soga、Takashi Jimbo、Masayoshi Umeno (1.Department of Electrical and Computer Engineering、2.Nagoya Institute of Technology)

https://doi.org/10.7567/SSDM.1990.B-3-6