[B-3-6] Improvement of GaAs MESFET's Characteristics on SiO2-Back-Coated Si Substrate by MOCVD

Takashi Egawa, Shinji Nozaki, Tetsuo Soga, Takashi Jimbo, Masayoshi Umeno (1.Department of Electrical and Computer Engineering, 2.Nagoya Institute of Technology)

https://doi.org/10.7567/SSDM.1990.B-3-6