[C-2-6] A Mechanism of Gate Oxide Deterioration Caused by Wafer Charging during Ion Implantation

Hirotaka MUTO、Haruhisa FUJII、Koichiro NAKANISHI、Shingo IKEDA (1.Manufacturing Development Lab.、2.Mitsubishi Electric Corp.)

https://doi.org/10.7567/SSDM.1990.C-2-6