[C-2-6] A Mechanism of Gate Oxide Deterioration Caused by Wafer Charging during Ion Implantation

Hirotaka MUTO, Haruhisa FUJII, Koichiro NAKANISHI, Shingo IKEDA (1.Manufacturing Development Lab., 2.Mitsubishi Electric Corp.)

https://doi.org/10.7567/SSDM.1990.C-2-6