[C-2-8] A Model for SiNx CVD Film Growth Mechanism by Using SiH4 and NH3 Source Gases

Akihiko Ishitani, Shiro Koseki (1.VLSI Development Division, NEC Corporation, 2.NEC Scientific Information System Development, Ltd.)

https://doi.org/10.7567/SSDM.1990.C-2-8