[C-5-6] Mechanical Stress Induced Threshold Voltage Shifts for Nitrided Oxide Gate n- and p- MOSFETs

H. S. Momose、T. Morimoto、S. Takagi、K. Yamabe、S. Onga、H. Iwai (1.ULSI Research Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1990.C-5-6