[C-6-5] Comparative Study of HC-Degradation of NMOS and PMOS Devices with n+ and p+ Gate: Experiments and Simulation

Udo SCHWALKE, Wilfried HANSCH, Arnulf LILL (1.SIEMENS AG, Corporate Research and Development)

https://doi.org/10.7567/SSDM.1990.C-6-5