[D-8-3] A 3.8 ns, 800 mW 256K Bipolar SRAM S. K. Wiedmann、D. F. Wendel、K. Ganssloser、C. T. Chuang、T. Chen、J. Warnock、M. P. Manny、R. V. Joshi (1.IBM Development Laboratory、2.IBM Research Center) https://doi.org/10.7567/SSDM.1990.D-8-3