1990 International Conference on Solid State Devices and Materials
Aug 22, 1990 - Aug 24, 1990 Hotel Sendai Plaza, Sendai, Japan
[D-8-3] A 3.8 ns, 800 mW 256K Bipolar SRAM
S. K. Wiedmann, D. F. Wendel, K. Ganssloser, C. T. Chuang, T. Chen, J. Warnock, M. P. Manny, R. V. Joshi (1.IBM Development Laboratory, 2.IBM Research Center)
