Fabrication of a-Si:H TFT&apos;s by a Large Area Ion Doping Technique

Akihisa YOSHIDA; Masaaki NUKAYAMA; Yasunori ANDOH; Masatoshi KITAGAWA; Takashi HIRAO

doi:https://doi.org/10.7567/SSDM.1990.LN-SE-3

[LN-SE-3] Fabrication of a-Si:H TFT's by a Large Area Ion Doping Technique

Akihisa YOSHIDA、Masaaki NUKAYAMA、Yasunori ANDOH、Masatoshi KITAGAWA、Takashi HIRAO (1.Central Resarch Laboratories, Matsushita Erectric Ind. co., Ltd.、2.Research and Development Div., Nissin Electric Co., Ltd.)

https://doi.org/10.7567/SSDM.1990.LN-SE-3

1990 International Conference on Solid State Devices and Materials

[LN-SE-3] Fabrication of a-Si:H TFT's by a Large Area Ion Doping Technique