Top-Gate Amorphous-Silicon Thin-Film Transistors Produced by CVD Method

Hiroshi Kanoh; Masahiro Yasukawa; Osamu Sugiura; Paul A. Breddels; Masakiyo Matsumura

doi:https://doi.org/10.7567/SSDM.1990.S-E-22

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜 1990年8月24日
Hotel Sendai Plaza, Sendai, Japan

[S-E-22] Top-Gate Amorphous-Silicon Thin-Film Transistors Produced by CVD Method

Hiroshi Kanoh、Masahiro Yasukawa、Osamu Sugiura、Paul A. Breddels、Masakiyo Matsumura (1.Department of Physical Electronics, Tokyo Institute of Technology、2.Philips Research Lab.)

https://doi.org/10.7567/SSDM.1990.S-E-22

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