[S-E-23] Characteristics of a-Si TFTs Using Thermal-CVD-SiO2/PECVD-SiNx Double Layered Gate Dielectrics

KAICHI FUKUDA, NOBUKI IBARAKI (1.Electron Device Engineering Laboratory, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1990.S-E-23