Mechanism of Mobility Improvement of a-Si TFT with Channel Passivated Layer

Yasuo TANAKA; Ken TSUTSUI; Toshiko KOIZUMI; Hideaki YAMAMOTO; Toshihisa TSUKADA

doi:https://doi.org/10.7567/SSDM.1990.S-E-25

1990 International Conference on Solid State Devices and Materials

Aug 22, 1990 - Aug 24, 1990
Hotel Sendai Plaza, Sendai, Japan

[S-E-25] Mechanism of Mobility Improvement of a-Si TFT with Channel Passivated Layer

Yasuo TANAKA, Ken TSUTSUI, Toshiko KOIZUMI, Hideaki YAMAMOTO, Toshihisa TSUKADA (1.Central Research Laboratory, Hitachi, Ltd., 2.Musashino Works, Hitachi Device, Ltd.)

https://doi.org/10.7567/SSDM.1990.S-E-25

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