Mechanism of Mobility Improvement of a-Si TFT with Channel Passivated Layer

Yasuo TANAKA; Ken TSUTSUI; Toshiko KOIZUMI; Hideaki YAMAMOTO; Toshihisa TSUKADA

doi:https://doi.org/10.7567/SSDM.1990.S-E-25

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜 1990年8月24日
Hotel Sendai Plaza, Sendai, Japan

[S-E-25] Mechanism of Mobility Improvement of a-Si TFT with Channel Passivated Layer

Yasuo TANAKA、Ken TSUTSUI、Toshiko KOIZUMI、Hideaki YAMAMOTO、Toshihisa TSUKADA (1.Central Research Laboratory, Hitachi, Ltd.、2.Musashino Works, Hitachi Device, Ltd.)

https://doi.org/10.7567/SSDM.1990.S-E-25

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