[A-2-1] Limits on Gate Insulator Thickness for MISFET Operation in Pure-Oxide and Nitrided-Oxide Gate Cases

T. Morimoto、H. S. Momose、M. Tsuchiaki、Y. Ozawa、K. Yamabe、H. Iwai (1.ULSI Research Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1991.A-2-1