Strain Evaluation at the Si/SiO2 Interface Using ER Method

Pornchai YONGWATTANASOONTORN; Hitoshi KUBO; Masato MORIFUJI; Kenji TANIGUCHI; Chihiro HAMAGUCHI Keitaro IMAI

doi:https://doi.org/10.7567/SSDM.1991.A-2-5

1991 International Conference on Solid State Devices and Materials

1991年8月27日〜 1991年8月29日
Pacifico Yokohama, Yokohama, Japan

[A-2-5] Strain Evaluation at the Si/SiO2 Interface Using ER Method

Pornchai YONGWATTANASOONTORN、Hitoshi KUBO、Masato MORIFUJI、Kenji TANIGUCHI、Chihiro HAMAGUCHI Keitaro IMAI (1.Department of Electronic Engineering, Osaka University、2.ULSI Research center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1991.A-2-5

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