Strain Evaluation at the Si/SiO2 Interface Using ER Method

Pornchai YONGWATTANASOONTORN; Hitoshi KUBO; Masato MORIFUJI; Kenji TANIGUCHI; Chihiro HAMAGUCHI Keitaro IMAI

doi:https://doi.org/10.7567/SSDM.1991.A-2-5

[A-2-5] Strain Evaluation at the Si/SiO2 Interface Using ER Method

Pornchai YONGWATTANASOONTORN, Hitoshi KUBO, Masato MORIFUJI, Kenji TANIGUCHI, Chihiro HAMAGUCHI Keitaro IMAI (1.Department of Electronic Engineering, Osaka University, 2.ULSI Research center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1991.A-2-5

1991 International Conference on Solid State Devices and Materials

[A-2-5] Strain Evaluation at the Si/SiO2 Interface Using ER Method