Low-Temperature Silicon Epitaxy without Substrate Heating and Selectivity Inversion in Ultraclean ECR Plasma Enhanced CVD

Takashi MATSUURA; Junichi MUROTA; Tadahiro OHMI; Shoichi ONO

doi:https://doi.org/10.7567/SSDM.1991.B-1-1

[B-1-1] Low-Temperature Silicon Epitaxy without Substrate Heating and Selectivity Inversion in Ultraclean ECR Plasma Enhanced CVD

Takashi MATSUURA、Junichi MUROTA、Tadahiro OHMI、Shoichi ONO (1.Department of Electronics, Faculty of Engineering, Tohoku University、2.Research Institute of Electrical Communication, Tohoku University)

https://doi.org/10.7567/SSDM.1991.B-1-1

1991 International Conference on Solid State Devices and Materials

[B-1-1] Low-Temperature Silicon Epitaxy without Substrate Heating and Selectivity Inversion in Ultraclean ECR Plasma Enhanced CVD