[B-1-3] Amorphization Processes in Ion Implanted Si: Temperature Dependence
T. Motooka, F. Kobayashi, P. Fons, T. Tokuyama T. Suzuki, N. Natsuaki
(1.University of Tsukuba, 2.Device Development Center, Hitachi, Ltd.)
https://doi.org/10.7567/SSDM.1991.B-1-3
