[B-1-3] Amorphization Processes in Ion Implanted Si: Temperature Dependence

T. Motooka、F. Kobayashi、P. Fons、T. Tokuyama T. Suzuki、N. Natsuaki (1.University of Tsukuba、2.Device Development Center, Hitachi, Ltd.)

https://doi.org/10.7567/SSDM.1991.B-1-3