[B-1-4] Rapid Vapor-Phase Direct Doping; Ultra-Shallow Junction Formation Method for High-Speed Bipolar and Highly-Integrated DRAM LSIs

Yukihiro Kiyota、Takahiro Onai、Tohru Nakamura、Taroh Inada、Atsushi Kuranouchi、Yasuaki Hirano (1.Central Research Laboratory, Hitachi, Ltd、2.College of Engineering, Hosei University)

https://doi.org/10.7567/SSDM.1991.B-1-4