[B-1-4] Rapid Vapor-Phase Direct Doping; Ultra-Shallow Junction Formation Method for High-Speed Bipolar and Highly-Integrated DRAM LSIs

Yukihiro Kiyota, Takahiro Onai, Tohru Nakamura, Taroh Inada, Atsushi Kuranouchi, Yasuaki Hirano (1.Central Research Laboratory, Hitachi, Ltd, 2.College of Engineering, Hosei University)

https://doi.org/10.7567/SSDM.1991.B-1-4