[D-2-2] High Power Operation of InGaAlP Visible Light Laser Diodes with an In0.62Ga0.38P Active Layer

K. Nitta, K. Itaya, Y. Nishikawa, M. Ishikawa, M. Okajima, G. Hatakoshi (1.Research and Development Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1991.D-2-2