[D-2-2] High Power Operation of InGaAlP Visible Light Laser Diodes with an In0.62Ga0.38P Active Layer

K. Nitta、K. Itaya、Y. Nishikawa、M. Ishikawa、M. Okajima、G. Hatakoshi (1.Research and Development Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1991.D-2-2