[D-3-2] A GaAs MESFET with Very Short Channel Length Fabricated by Selective MOCVD Technique

Chang-Tae Kim、Chang-Hee Hong、Young-Se Kwon (1.Dept. Of Elec. Eng., Korea Advanced Institute of Science and Technology)

https://doi.org/10.7567/SSDM.1991.D-3-2