Metal-Organic Molecular-Beam Epitaxy with a New Arsenic Precursor As[N(CH3)2]3: Characterization of the Decomposition Processes and Growth of GaAs

Tomoaki KOUI; Ikuo SUEMUNE; Kazuhiko HAMAOKA; Kazuyuki FUJII; Akihiro KISHIMOTO; Yoshiaki HONDA; Masamichi YAMANISHI

doi:https://doi.org/10.7567/SSDM.1991.D-4-1

[D-4-1] Metal-Organic Molecular-Beam Epitaxy with a New Arsenic Precursor As[N(CH3)2]3: Characterization of the Decomposition Processes and Growth of GaAs

Tomoaki KOUI、Ikuo SUEMUNE、Kazuhiko HAMAOKA、Kazuyuki FUJII、Akihiro KISHIMOTO、Yoshiaki HONDA、Masamichi YAMANISHI (1.Faculty of Engineering, Hiroshima University)

https://doi.org/10.7567/SSDM.1991.D-4-1

1991 International Conference on Solid State Devices and Materials

[D-4-1] Metal-Organic Molecular-Beam Epitaxy with a New Arsenic Precursor As[N(CH3)2]3: Characterization of the Decomposition Processes and Growth of GaAs