Growth Process and Mechanism of Nanometer-Scale GaAs Dot-Structures Using MOCVD Selective Growth

Y. Nagamune; S. Tsukamoto; M. Nishioka; Y. Arakawa

doi:https://doi.org/10.7567/SSDM.1991.D-6-1

[D-6-1] Growth Process and Mechanism of Nanometer-Scale GaAs Dot-Structures Using MOCVD Selective Growth

Y. Nagamune, S. Tsukamoto, M. Nishioka, Y. Arakawa (1.Research Center for Advanced Science and Technology, University of Tokyo, 2.Institute of Industrial Science, University of Tokyo)

https://doi.org/10.7567/SSDM.1991.D-6-1

1991 International Conference on Solid State Devices and Materials

[D-6-1] Growth Process and Mechanism of Nanometer-Scale GaAs Dot-Structures Using MOCVD Selective Growth