Growth Process and Mechanism of Nanometer-Scale GaAs Dot-Structures Using MOCVD Selective Growth

Y. Nagamune; S. Tsukamoto; M. Nishioka; Y. Arakawa

doi:https://doi.org/10.7567/SSDM.1991.D-6-1

[D-6-1] Growth Process and Mechanism of Nanometer-Scale GaAs Dot-Structures Using MOCVD Selective Growth

Y. Nagamune、S. Tsukamoto、M. Nishioka、Y. Arakawa (1.Research Center for Advanced Science and Technology, University of Tokyo、2.Institute of Industrial Science, University of Tokyo)

https://doi.org/10.7567/SSDM.1991.D-6-1

1991 International Conference on Solid State Devices and Materials

[D-6-1] Growth Process and Mechanism of Nanometer-Scale GaAs Dot-Structures Using MOCVD Selective Growth