[D-6-2] Low Temperature Surface Preparation of Vicinal Si(100) for Epitaxial Growth of GaAs on Si

Yoshitaka OKADA、Haruhiko AJISAWA、Akira MOKI、Takeyoshi SUGAYA、Mitsuo KAWABE (1.Institute of Materials Science, University of Tsukuba)

https://doi.org/10.7567/SSDM.1991.D-6-2