[D-6-2] Low Temperature Surface Preparation of Vicinal Si(100) for Epitaxial Growth of GaAs on Si

Yoshitaka OKADA, Haruhiko AJISAWA, Akira MOKI, Takeyoshi SUGAYA, Mitsuo KAWABE (1.Institute of Materials Science, University of Tsukuba)

https://doi.org/10.7567/SSDM.1991.D-6-2