[D-6-3] Electrical Properties of ZnSe-Based II-VI Semiconductors/(NH4)2Sx-Pretreated GaAs Heterointerfaces

Takahiro Ohnakado, Yi-hong Wu, Yoichi Kawakami, Shizuo Fujita, Shigeo Fujita (1.Department of Electrical Engineering, Kyoto University)

https://doi.org/10.7567/SSDM.1991.D-6-3