BF2+ Ion Implantation into Very Low Temperature Si Wafer

M. Takakura; T. Kinoshita; T. Uranishi; S. Miyazaki; M. Koyanagi; M. Hirose

doi:https://doi.org/10.7567/SSDM.1991.PB2-1

1991 International Conference on Solid State Devices and Materials

1991年8月27日〜 1991年8月29日
Pacifico Yokohama, Yokohama, Japan

[PB2-1] BF2+ Ion Implantation into Very Low Temperature Si Wafer

M. Takakura、T. Kinoshita、T. Uranishi、S. Miyazaki、M. Koyanagi、M. Hirose (1.Department of Electrical Engineering, Hiroshima University、2.Research Center for Integrated Systems, Hiroshima University)

https://doi.org/10.7567/SSDM.1991.PB2-1

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