Low Damage Magnetron Enhanced Reactive Ion Etching

Masayuki SATO; Daisuke KIMURA; Nobuyuki TAKENAKA; Shigeo ONISHI; Keizo SAKIYAMA; Tohru HARA

doi:https://doi.org/10.7567/SSDM.1991.PB2-4

1991 International Conference on Solid State Devices and Materials

1991年8月27日〜 1991年8月29日
Pacifico Yokohama, Yokohama, Japan

[PB2-4] Low Damage Magnetron Enhanced Reactive Ion Etching

Masayuki SATO、Daisuke KIMURA、Nobuyuki TAKENAKA、Shigeo ONISHI、Keizo SAKIYAMA、Tohru HARA (1.VLSI Development Laboratories, IC-Group, SHARP Corporation、2.Department of Electrical Engineering, Hosei University)

https://doi.org/10.7567/SSDM.1991.PB2-4

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