[PB3-4] Role of SiN Bond Formed by N2O-Oxynitridation for Improving Dielectric Properties of Ultrathin SiO2 Films

Makoto YASUDA、Hisashi FUKUDA、Toshiyuki IWABUCHI、Seigo OHNO (1.Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.)

https://doi.org/10.7567/SSDM.1991.PB3-4