[PB4-6] High Hole Mobility p-channel MOSFET's Using MOS-gated Si/Si1-xGex Heterostructures

J. C. Sturm、P. M. Garone、V. Venkataraman (1.Department of Electrical Engineering Princeton University)

https://doi.org/10.7567/SSDM.1991.PB4-6