[PB4-L8] Si/Si1-xGex Selective Epitaxial Growth by Ultra High Vacuum Chemical Vapor Deposition Using Si2H6, GeH4

Ken-ichi Aketagawa、Toru Tatsumi、Masayuki Hiroi、Taeko Niino、Junro Sakai (1.ANELVA Corp.、2.Microelectronics Laboratories, NEC Corp.)

https://doi.org/10.7567/SSDM.1991.PB4-L8