[PB4-L8] Si/Si1-xGex Selective Epitaxial Growth by Ultra High Vacuum Chemical Vapor Deposition Using Si2H6, GeH4

Ken-ichi Aketagawa, Toru Tatsumi, Masayuki Hiroi, Taeko Niino, Junro Sakai (1.ANELVA Corp., 2.Microelectronics Laboratories, NEC Corp.)

https://doi.org/10.7567/SSDM.1991.PB4-L8