Fluoride Buffer Layer Relaxing the Stress of GaAs on Si and Its Effects

Masahiro UCHIGOSHI; Kazuo TSUTSUI; Seijiro FURUKAWA

doi:https://doi.org/10.7567/SSDM.1991.PB6-1

1991 International Conference on Solid State Devices and Materials

1991年8月27日〜 1991年8月29日
Pacifico Yokohama, Yokohama, Japan

[PB6-1] Fluoride Buffer Layer Relaxing the Stress of GaAs on Si and Its Effects

Masahiro UCHIGOSHI、Kazuo TSUTSUI、Seijiro FURUKAWA (1.Dept. of Applied Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.1991.PB6-1

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