Behavior of Wafer SMD (Surface Micro Defect) as a Origin of Oxide Breakdown

Moriya MIYASHITA; Hiroyuki FUKUI; Atsuko KUBOTA; Shuichi SAMATA; Hachiro HIRATSUKA; Yoshiaki MATSUSHITA

doi:https://doi.org/10.7567/SSDM.1991.PB7-6

1991 International Conference on Solid State Devices and Materials

Aug 27, 1991 - Aug 29, 1991
Pacifico Yokohama, Yokohama, Japan

[PB7-6] Behavior of Wafer SMD (Surface Micro Defect) as a Origin of Oxide Breakdown

Moriya MIYASHITA, Hiroyuki FUKUI, Atsuko KUBOTA, Shuichi SAMATA, Hachiro HIRATSUKA, Yoshiaki MATSUSHITA (1.Semiconductor Materials Engineering Dept. Toshiba Corporation)

https://doi.org/10.7567/SSDM.1991.PB7-6

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